Confirmed speakers:

Andy Barnes
ESA - European Space Agency
United Kingdom
Avram Bar-Cohen
Raytheon
United States of America
Volker Cimalla
IAF - Fraunhofer Institute for Applied Solid State Physics
Germany
Daniel Francis
Akash systems
United States of America
Daniel Hou
GCS - Global Communication Semiconductors
United States of America
Jose Jimenez
Qorvo
United States of America
Martin Kuball
University of Bristol
United Kingdom
Erich Neubauer
RHP technology
Austria
Won Sung Lee
RFHIC
South Korea/United States of America
Oliver Williams
Cardiff University
United Kingdom

8h30 – 9h15

Reception

9h15 – 9h35

Martin Kuball

GaN-on-Diamond Technology – Recent Successes of the EPSRC GaN-DaME Programme Grant

9h35 – 10h15

Andy Barnes

TBA

10h15 – 10h55

Jose Jimenez

The need for higher Power Density Devices: A must have or a nice thing to have?

10h55 – 11h25

Coffee Break and Posters

11h25 – 12h05

Oliver Williams

Diamond growth on non-diamond materials

12h05 – 12h45

Daniel Francis

GaN-HEMT-on-diamond from Materials to Devices

12h45 – 13h45

Lunch and Posters

13h45 – 14h25

Daniel Hou

Manufacturing and Performance of GaN on Diamond Devices in a 4-inch Wafer Foundry

14h25 – 15h05

Volker Cimalla 

Low temperature bonding of GaN electronics on diamond heat spreader

15h05 – 15h45

Avram Bar Cohen

Embedded Microfluidic Cooling of High Power GaN Components

15h45 – 16h15

Coffee Break and Posters

16h15 – 16h55

Won Sang Lee

A high power GaN/Diamond HEMT with production level performance.

16h55 – 17h35

Erich Neubauer

Metal – Diamond Composites: Thermal Management Solutions for High Performance Electronics

17h35

Closing Reception

Biographies of Invited Speakers:

Avram Bar Cohen (Raytheon)

Embedded Microfluidic Cooling of High Power GaN Components.

Avram Bar-Cohen is currently Principal Engineering Fellow at Raytheon-Space and Airborne Systems in Rosslyn, Virginia. He obtained his SB, SM, and PhD in Mechanical Engineering at the Massachusetts Institute of Technology. After completing his PhD, Bar-Cohen accepted a position as Senior Engineer and Section Manager at Raytheon-Missile Systems Division and continued on to faculty and administrative positions at Ben Gurion University (in Israel), the University of Minnesota, and the University of Maryland, prior to spending 5.5 years as a Program Manager for Thermal Management at DARPA-MTO.

His current efforts focus on the architecture and thermal management of directed energy systems for power beaming, as well as defensive and offensive weapon systems. He also continues to pursue embedded cooling, including two-phase microchannel coolers, on-chip thermoelectrics, and diamond substrates for high heat flux electronic and photonic components in computational, radar, and directed energy systems.

Volker Cimalla (IAF – Fraunhofer Institute for Applied Solid State
Physics)

Low temperature bonding of GaN electronics on diamond heat spreader

Volker Cimalla is currently group manager at the Fraunhofer Institute for Applied Solid State Physics (IAF) in Freiburg. He studied electrical engineering and earned his PhD in 1998 from Ilmenau University of Technology. After completing his PhD, Volker Cimalla accepted a position as research assistant at the foundation for Research and Technology Hellas and as assistant professor at the Ilmenau University of Technology working on the growth optimization of wide band gap semiconductors (SiC, GaN, metal oxides), mainly for applications in chemical sensors and microelectromechanical systems. Currently at Fraunhofer IAF, Volker Cimalla is focused on the growth of single crystalline diamond including the doping to achieve p- and n-type conductivities for electronic devices as well as the employment of defect centres in diamond for sensing applications.

Daniel Francis, (Akash Systems)

Latest technology status in GaN-on-Diamond devices at Akash – technical challenges and advances

Daniel Francis, Ph.D., joined Akash Systems in August 2018 as Vice President of Materials. Previously, Dan led the technical team that invented the GaN-on-Diamond technology in 2003 at Group4 Labs, Inc., where he was Co-Founder and Chief Technology Officer. After the acquisition of Group4 Labs by Element 6, LLC (a member of the DeBeers group of companies), Dan continued to lead the development of GaN-on-Diamond wafers as Head of Compound Semiconductor Product Engineering. Prior to working with GaN-on-Diamond, Dan worked at Finisar Corporation (through the acquisition of GenOA, Inc). At GenOA, he ran a technical team of up to 45 people who were developing Linear Optical Amplifiers, Long Wavelength VCSELs, and avalanche and PIN photodiodes. Dan has co-authored more than one hundred papers and over 20 patents. Dan holds a Ph.D. in Applied Physics from Stanford University.

Daniel Hou (GCS)

Manufacturing and Performance of GaN on Diamond Devices in a 4-inch Wafer Foundry

Daniel Hou is currently VP of Engineering at Global Communication Semiconductors, LLC in Torrance, California. He earned his Bachelor degree from Tsinghua University in Taiwan, and his Master and PhD degrees in Materials Science from University of Southern California. After completing his PhD, Daniel Hou accepted a position as Member of Technical Staff at Science Centre of Rockwell International working on GaAs IC processes.  He later Joined MACOM and Hughes Electronics as GaAs MMIC Process Department manager. In 1998, he co-founded Global Communication Semiconductors as a compound Semiconductor foundry. He has since been responsible for bringing various compound semiconductor technologies from development stage to production, including GaAs HBT, pHEMT, GaN, SiC etc.
Daniel Hou  is currently focused on GaN HEMT devices, SiC JBS diodes and JFETs and AlN based BAW filter technology for RF and power electronics applications. His work on GaN /Diamond is in collaboration with RFHIC, USA. The objective of this project is to develop and mature a GaN/Diamond manufacturing process in a 4 inch wafer foundry in order to provide high volume production of these devices for upcoming wireless communication infrastructure needs.

Jose Jimenez (Qorvo)

The need for higher Power Density Devices: “A must have or a nice thing to have?

Jose Jimenez is a Device Physics Fellow at Qorvo. He received the B.A (1992) in Electrical Engineering from the Universidad Politecnica de Madrid and the Ph. D. (1996) in Electrical Engineering from Columbia University in New York. He is also a La Caixa Fellow and a Beckman Fellow. Jose Jimenez has worked in both integrated optics and in transport and optoelectronics semiconductor devices for the last twenty years in Telefonica R&D (Spain), T. J. Watson IBM Research Laboratory, Beckman Institute and Nanovation Technologies. For the last seventeen years, he has been part of the R&D organization of TriQuint Semiconductor (now Qorvo) first leading the efforts in 4” inch optoelectronics devices (DFB lasers and high-speed photo-detectors) and later leading the development of Qorvo’s current line-up of GaN and GaAs FET technologies. He holds 7 patents and has written more than 70 articles. He is currently a technical committee member for the Compound Semiconductor chapter of the International Reliability Physics Symposium, the European Symposium on Reliability of Electron Devices and the Microwave Theory & Technique Society. His current interests expand in areas as diverse as extending the capabilities of GaN technology, developing hybrid digital-RF solutions for the improvement of the inherent limitations of RF FET devices, and extending the capabilities of circuit design by means of physics-based circuit-friendly device models.

Martin Kuball – (Centre for Device Thermography and Reliability)

GaN-on-Diamond Technology – Recent Successes of the EPSRC GaN-DaME Programme Grant

Prof. Martin Kuball is Director of the Centre for Device Thermography and Reliability (CDTR) at the University of Bristol; he holds a PhD from the Max-Planck Institute for Solid State Physics in Stuttgart, Germany, and joined the University of Bristol in 1997 after holding a Feodor Lynen Fellowship at Brown University, USA. He is Fellow of the Materials Research Society, the Society of Photo-Optical Instrumentation Engineers (SPIE), the Institution of Engineering and Technology (IET) and the Institute of Physics (IoP). His research focuses on thermal management, electrical design and testing and reliability of wide bandgap semiconductor electronics. He leads the Programme Grant GaN-DaME and the Platform Grant MANGI both focusing on GaN-on-Diamond electronics.

Erich Neubauer (RHP-Technology)

Diamond Composites: Thermal Management Solutions for High Performance Electronics

Erich Neubauer is currently Managing Director at RHP-Technology in Seibersdorf, Austria. He earned his Diploma at the Vienna University of Vienna and Munich and his PhD in Technical Physis from the Vienna University. After completing his PhD, Erich Neubauer started in 2003 as a researcher and project manager at the Austrian Institute of Technology where he was responsible for the development of advanced composite materials. In 2010 he founded with two colleagues the spin-off company, RHP-Technology, with a focus on providing customized materials using advanced manufacturing techniques. He is also co-founder of the company “AT-Space” which was recently started which provides components for satellite propulsion systems.

Oliver Williams (Cardiff University)

Diamond growth on non-diamond materials

Oliver Williams is currently Professor of Experimental Physics at Cardiff University. He earned his bachelor’s and PhD degrees in Electronic and Electrical Engineering at the University College London. After completing his PhD, Oliver accepted a postdoctoral appointment at Argonne National Laboratory.  Following this he worked at the Interuniversity MicroElectronics Consortium (IMEC, Belgium) and the Fraunhofer Institute of Applied Research (Germany). Oliver is currently focused on Quantum motion in superconducting mechanical structures, single photoncentres, thermal management of electronic devices and surface acoustic wave devices.

Andrew Barnes (Marconi Research Centre)

Talk Title : GaN technology – is it ready for spaceflight?

Andrew Barnes worked from 1986-1988 with the Marconi Research Centre as a development engineer for W-band mmwave components. He then joined the Defence Research Agency focusing on advanced microwave and mm-wave integrated circuit design. From 2001 to 2004 he worked for the QinetiQ group as team leader for microwave circuit design, developing state of art multifunction MMIC components and modules for phased array radar systems. In 2001 he was awarded the Chief Scientist Prize for technical achievement and became a QinetiQ fellow. Since 2005 he has worked at the European Space Agency as a senior technology engineer, where he is in charge of GaN component development. More recently, Andrew has been responsible for establishing and managing the ESA-RAL Advanced Manufacturing Laboratory based at Harwell in the UK. Here, the aim is to assess and pre-screen advanced materials and process developments that have strong potential to be matured for space applications.

An overview shall be given of ESA’s GaN component development and space qualification activities, in particular focusing on the benefit of using early in-orbitdemonstration to help de-risk the use of GaN technology for space system insertion.

Won Sang Lee (GaN/Diamond Division at RFHIC US Corp., Morrisville, North Carolina)

A high power GaN/Diamond HEMT with production level performance.

Won Sang Lee is currently Director and General Manager of GaN/Diamond Division at RFHIC US Corp., Morrisville, North Carolina. He earned his Ph.D in 1999 from Kwang Woon University in Korea and his Post-doc from University of California at Los Angeles in USA. Since 1991, he joined LG Central Institute of Technology as principal engineer. In 2004, he joined Korea Advanced Nano FAB Center as principal engineer.

He has been experienced for bring various III-V compound semiconductor technologies from R&D to production, including GaAs 0.15 um p-HEMT/MMIC, 1 um GaAs HBT/MMIC etc. Since he invented PEC (Photo-Electro Chemical) etching process of GaN/Sapphire MESFET for gate recess etching process on 1997, is currently focused on GaN/SiC HEMT, GaN/Diamond HEMT and AlN/Diamond filter for RF and high power electronics market. An overview shall be given of ESA’s GaN component development and space qualification activities, in particular focusing on the benefit of using early in-orbitdemonstration to help de-risk the use of GaN technology for space system insertion.